• Brand / Manufacturer: Micron
• Capacity: 4GB
• Memory Type: DDR3 / DDR3L SDRAM (Unbuffered UDIMM)
• Speed / Frequency: 1600 MHz (PC3L-12800U)
• Voltage: 1.35V (Low voltage, backward compatible with 1.5V DDR3 slots)
• Pin Count: 240-pin
• CAS Latency: CL11
• Rank / Configuration: Single Rank (1Rx8), 512M x 64
• Error Correction (ECC): Non-ECC (Unbuffered)
Introducing the Micron MT8KTF51264AZ-1G6E1 4GB DDR3L Memory Module, a reliable and efficient upgrade for your computing needs. This memory module is designed to enhance your system's performance, offering the perfect balance of speed and power efficiency. Ideal for users seeking to improve their system's responsiveness and multitasking capabilities, this module is a great fit for various applications, from everyday computing to more demanding tasks.
Key Specifications:
- Brand / Manufacturer: Micron
- Capacity: 4GB
- Memory Type: DDR3 / DDR3L SDRAM (Unbuffered UDIMM)
- Speed / Frequency: 1600 MHz (PC3L-12800U)
- Voltage: 1.35V (Low voltage, backward compatible with 1.5V DDR3 slots)
- Pin Count: 240-pin
- CAS Latency: CL11
- Rank / Configuration: Single Rank (1Rx8), 512M x 64
- Error Correction (ECC): Non-ECC (Unbuffered)
This memory module is in like-new condition, ensuring you receive a product that meets high standards of quality and reliability. With its low voltage design, it consumes less power, making it an environmentally friendly choice that doesn't compromise on performance. Whether you're upgrading or building a new system, the Micron MT8KTF51264AZ-1G6E1 is an excellent choice.
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